TSFF5510 document number 81835 rev. 1.0, 07-feb-08 vishay semiconductors www.vishay.com 1 21061 for technical support, contact: emittertechsupport@vishay.com high speed infrared emitting diode, 870 nm, gaalas double hetero description TSFF5510 is an infrared, 870 nm emitting diode in gaalas double hetero (dh) technology with high radiant power and high speed, molded in a clear, untinted, plastic package. features ? package type: leaded ? dimensions: t-1? ( ? 5 mm) ? peak wavelength: p = 870 nm ? high reliability ? high radiant power e2 ? high radiant intensity ? angle of half intensity: ? = 38 ? low forward voltage ? suitable for high pulse current operation ? high modulation bandwidth ? good spectral matching to si photodetectors ? lead (pb)-free component in accordance with rohs 2002/95/ec and weee 2002/96/ec applications ? infrared video data transmission between camcorder and tv set ? free air data transmission systems with high modulation frequencies or high data transmission product summary ordering information note: moq: minimum order quantity absolute maximum ratings t amb = 25 c, unless otherwise specified component symbol value unit TSFF5510 e 55 mw i e 32 mw/sr t r , t f 15 ns ? 38 deg p 870 nm ordering code packing remarks TSFF5510 bulk moq: 4000 pcs, 4000 pcs/bulk parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma peak forward current t p /t = 0.5, t p = 100 s i fm 200 ma surge forward current t p = 100 s i fsm 1a power dissipation p v 170 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s, 2 mm from case t sd 260 c thermal resistance juncti on/ambient j-std-051, leads 7 mm soldered on pcb r thja 250 k/w
www.vishay.com 2 document number 81835 rev. 1.0, 07-feb-08 TSFF5510 vishay semiconductors for technical support, contact: emittertechsupport@vishay.com electrical characteristics t amb = 25 c, unless otherwise specified optical characteristics t amb = 25 c, unless otherwise specified figure 1. power dissipation limi t vs. ambient temperature 0 20 40 60 8 0 100 120 140 160 1 8 0 010203040506070 8 0 90 100 21007 t am b - am b ient temperat u re (c) p v - po w er dissipation (m w ) r thja = 250 k/ w figure 2. forward current limi t vs. ambient temperature 0 20 40 60 8 0 100 120 0 10 203040 506070 8 0 90 100 t am b - am b ient temperat u re (c) 2100 8 i f - for w ard c u rrent (ma) r thja = 250 k/ w parameter test condition symbol min. ty p. max. unit forward voltage i f = 100 ma, t p = 20 ms v f 1.3 1.45 1.7 v i f = 450 ma, t p = 100 s v f 1.5 1.75 2.1 v i f = 1 a, t p = 100 s v f 2.1 v temperature coefficient of v f i f = 1 ma tk vf - 1.8 mv/k reverse current v r = 5 v i r 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 110 pf parameter test condition symbol min. ty p. max. unit radiant intensity i f = 100 ma, t p = 20 ms i e 32 mw/sr radiant power i f = 100 ma, t p = 20 ms e 44 55 89 mw i f = 450 ma, t p = 100 s e 200 247 400 mw i f = 1 a, t p = 100 s e 550 mw temperature coefficient of e i f = 100 ma tk e - 0.35 %/k angle of half intensity ? 38 deg peak wavelength i f = 100 ma p 870 nm spectral bandwidth i f = 100 ma ? 55 nm temperature coefficient of p i f = 100 ma tk p 0.25 nm/k rise time i f = 100 ma t r 15 ns fall time i f = 100 ma t f 15 ns cut-off frequency i dc = 70 ma, i ac = 30 ma pp f c 23 mhz
TSFF5510 document number 81835 rev. 1.0, 07-feb-08 vishay semiconductors www.vishay.com 3 for technical support, contact: emittertechsupport@vishay.com basic characteristics t amb = 25 c, unless otherwise specified figure 3. pulse forward current vs. pulse duration figure 4. forward current vs. forward voltage figure 5. radiant intensity vs. forward current 100 1000 0.01 0.1 1.0 10 100 t p - p u lse d u ration (ms) 16031 t p /t = 0.01 0.05 0.2 0.5 0.1 0.02 t am b < 50 i f - for w ard c u rrent (ma) 0.001 0.01 0.1 1 10 0 0.5 1 1.5 2 2.5 3 3.5 4 21009 i f - for w ard c u rrent (a) v f - for w ard v oltage ( v ) 0.1 1 10 100 1000 1 10 100 1000 21010 i f - for w ard c u rrent (ma) i e - radiant intensity (m w /sr) t p = 100 s t p /t = 0.002 figure 6. radiant power vs. forward current figure 7. relative radiant power vs. wavelength figure 8. relative radiant intensity vs. angular displacement 0.1 1 10 100 1000 1 10 100 1000 i f - for w ard c u rrent (ma) e - radiant po w er (m w ) 21062 t p = 100 s t p /t = 0.002 0 0.25 0.50 0.75 1.00 1.25 750 770 790 8 10 8 30 8 50 8 70 8 90 910 930 950 970 - w a v elength (nm) 21011 - relati v e radiant po w er e, rel i f = 100 ma 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 1.1 - 90 - 70 - 50 - 30 - 10 0 10 30 50 70 90 21012 i e, rel - relati v e radiant intensity angle ()
www.vishay.com 4 document number 81835 rev. 1.0, 07-feb-08 TSFF5510 vishay semiconductors for technical support, contact: emittertechsupport@vishay.com package dimensions in millimeters 20796
TSFF5510 document number 81835 rev. 1.0, 07-feb-08 vishay semiconductors www.vishay.com 5 for technical support, contact: emittertechsupport@vishay.com ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releas es of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
|
